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APTGF50A60T1G Phase leg NPT IGBT Power Module 5 Q1 7 8 Q2 CR2 9 10 1 2 12 3 4 NTC 6 11 VCES = 600V IC = 50A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant CR1 Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 600 65 50 230 20 250 100A @ 500V Unit V A V W August, 2007 1-6 APTGF50A60T1G - Rev 0 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGF50A60T1G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 600V Tj = 25C Tj = 125C Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 50A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 50A RG = 2.7 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 50A RG = 2.7 VGE = 15V Tj = 125C VBus = 400V IC = 50A Tj = 125C RG = 2.7 Min Typ Max 250 500 2.45 6 400 Typ 2200 323 200 166 20 100 40 9 120 12 42 10 130 21 0.5 mJ 1 Max Unit A V V nA Unit pF 1.7 4 2.0 2.2 Dynamic Characteristics Min nC ns ns Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 25A IF = 50A IF = 25A IF = 25A VR = 400V di/dt =200A/s Min 600 Typ Max 25 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage VR=600V V Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C trr Qrr Reverse Recovery Time Reverse Recovery Charge 30 175 55 485 ns nC www.microsemi.com 2-6 APTGF50A60T1G - Rev 0 August, 2007 25 1.8 2.2 1.6 2.2 APTGF50A60T1G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.5 1.4 150 125 100 4.7 80 Unit C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz V C N.m g To heatsink M4 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25 Min Typ 50 3952 Max Unit k K SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGF50A60T1G - Rev 0 August, 2007 APTGF50A60T1G Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 150 TJ=25C 250s Pulse Test < 0.5% Duty cycle 150 Ic, Collector Current (A) Ic, Collector Current (A) 250s Pulse Test < 0.5% Duty cycle 100 TJ=125C 100 TJ=25C 50 50 TJ=125C 0 0 1 2 3 4 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 150 125 100 75 50 25 TJ=25C 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge IC = 50A TJ = 25C VCE=120V VCE=300V VCE=480V 4 18 VGE, Gate to Emitter Voltage (V) 250s Pulse Test < 0.5% Duty cycle Ic, Collector Current (A) 16 14 12 10 8 6 4 2 0 0 TJ=125C 0 0 1 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) 2 10 25 50 75 100 125 150 175 200 Gate Charge (nC) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 25 50 75 100 TJ, Junction Temperature (C) 125 Ic=25A 250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=50A Ic=100A VCE, Collector to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. 8 7 6 5 4 3 2 1 0 6 8 10 12 Ic=25A Ic=50A TJ = 25C 250s Pulse Test < 0.5% Duty cycle Ic=100A 14 16 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.20 Ic, DC Collector Current (A) DC Collector Current vs Case Temperature 70 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, Case Temperature (C) 1.10 1.00 0.90 0.80 25 50 75 100 125 TJ, Junction Temperature (C) www.microsemi.com 4-6 APTGF50A60T1G - Rev 0 August, 2007 APTGF50A60T1G Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 60 VGE = 15V Turn-Off Delay Time vs Collector Current 175 150 125 100 75 50 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current VCE = 400V, VGE = 15V, RG = 2.7 VCE = 400V RG = 2.7 VGE=15V, TJ=125C 50 40 Tj = 125C VCE = 400V RG = 2.7 30 VGE=15V, TJ=25C 20 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 60 50 VCE = 400V RG = 2.7 60 50 tf, Fall Time (ns) tr, Rise Time (ns) 40 30 20 10 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150 VGE=15V, TJ=125C 40 30 20 10 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150 TJ = 125C TJ = 25C Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ) 2 Eon, Turn-On Energy Loss (mJ) 2.5 2 1.5 1 0.5 0 Turn-Off Energy Loss vs Collector Current VCE = 400V VGE = 15V RG = 2.7 1.5 1 0.5 0 0 VCE = 400V RG = 2.7 TJ=125C, VGE=15V TJ = 125C 25 50 75 100 125 150 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance 3 Switching Energy Losses (mJ) IC, Collector Current (A) 2.5 2 1.5 Eoff, 50A ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area 120 VCE = 400V VGE = 15V TJ= 125C 100 80 Eon, 50A 1 0.5 Eon, 50A 40 20 0 0 5 10 15 20 Gate Resistance (Ohms) 25 0 200 400 600 VCE, Collector to Emitter Voltage (V) www.microsemi.com 5-6 APTGF50A60T1G - Rev 0 0 August, 2007 60 APTGF50A60T1G Capacitance vs Collector to Emitter Voltage Fmax, Operating Frequency (kHz) 10000 C, Capacitance (pF) Operating Frequency vs Collector Current 240 200 160 120 80 40 0 0 20 40 60 80 100 IC, Collector Current (A) hard switching ZVS ZCS VCE = 400V D = 50% RG = 2.7 TJ = 125C TC= 75C Cies 1000 Coes Cres 100 0 10 20 30 40 50 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 0 0.00001 Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTGF50A60T1G - Rev 0 Microsemi reserves the right to change, without notice, the specifications and information contained herein August, 2007 |
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